Process Hierarchy

  Pre-furnace clean (for metallized wafers)
Batch size 12
Solutions and their concentrations.
PRS 3000
Process duration 60 min
Sides processed both
Temperature 80 °C
Wafer size
Wafer size
Equipment Sink 1
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
teflon cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • Metallized wafers must be cleaned with this process prior to furnace processes unless the wafers also have DUV photoresist on them. The metallized wafers with DUV photoresist on them must use the following clean: