Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Buffered Oxide Etch
Process characteristics:
Depth
Depth to be etched in material
Depth
Depth to be etched in material, must be 0 .. 4 µm
0 .. 4 µm
Batch size 25
Etchant
Solutions and their concentrations.
 HF (buffered)
Materials phosphosilicate glass, silicon dioxide
Sides processed both
Wafer size
Wafer size
Equipment Wet etch bench
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
 1 .. 150 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
 rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
 200 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 teflon boat, teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm