Process Hierarchy

on front
  Silicon Dioxide ICP Etch
Process characteristics:
must be 0.01 .. 2 µm
0.01 .. 2 µm
Etch rate 1920 Å/min
Gas CF4
Material silicon dioxide
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
AZ 5214e: 1, AZ 9245: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment VLR 700 Cluster - Fluorine Dielectric Etch Chamber
Equipment characteristics:
Batch sizes 100 mm: 25
Wafer geometry
Types of wafers this equipment can accept
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), sapphire, silicon, silicon on insulator