Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Supercritical CO2 Dry
Ambient
Ambient to which substrate is exposed during processing
 methanol/carbon dioxide/air
Pressure
Pressure of process chamber during processing
 1350 atm
Sides processed both
Temperature 40 °C
Wafer size
Wafer size
Equipment Critical point dryer
Equipment characteristics:
Batch sizes 50 .. 100 mm: 1
MOS clean no
Piece dimension
Range of wafer piece dimensions the equipment can accept
 2 .. 150 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
 circular, irregular, other, rectangular, triangular shard
Piece thickness
Range of wafer piece thickness the equipment can accept
 200 .. 6000 µm
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
 teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • Allows samples to be dried without any surface tension. This process is typically used to dry samples that have been rinsed in de-ionized water. The DI Water is then replaced with methanol prior to the drying process, which is then displaced by liquid CO2 as part of the drying process.
  • * Wafer holder is a teflon tub.