Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  HF dip
Batch size 25
Process duration 30 s
Sides processed both
Temperature 25 °C
Wafer size
Wafer size
Equipment PFC bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1200 µm
Comments:
  • Process to clean contaminants under the surface using a 10:1 DI-HF concentration or a 100:1 DI-HF concentration to preserve critical oxide thickness.