Process Hierarchy

on front
  Polysilicon RIE (non-clean)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 10 µm
0 .. 10 µm
Allowed metals Au, Al, Mo, W, Ti, Ni, Ta
Edge profile
Free form text field for description of edge profile
Etch rate 1500 Å/min
Material polysilicon
Pressure of process chamber during processing
5 mTorr
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 1.3, polysilicon: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment SemiGroup RIE
Equipment characteristics:
Batch sizes 100 mm: 4, 150 mm: 1, 50 mm: 5, 75 mm: 4
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator, glass (category)
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm