Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Photoresist develop (AZ 9260)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 10 µm
0 .. 10 µm
Batch size 25
Developer
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
 AZ 400K
Etch rate 1.5 µm/min
Excluded materials gold (category), copper
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Material AZ 9260
Max field size 90 mm
Min feature size 2 µm
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 AZ 9260: 1
Sides processed either
Temperature 20 °C
Wafer size
Wafer size
Equipment Air Control Microvoid
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon dioxide, Borofloat (Schott), alumina
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.