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KOH Silicon Etch I (Single side etching): View
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KOH Silicon Etch I (Single side etching)
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1000 µm
0 .. 1000 µm
Solutions and their concentrations.
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
silicon dioxide: 600, silicon nitride: 10000, silicon: 1
50 .. 150 mm
Constant temperature bath
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm