Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  KOH silicon etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 1 .. 600 µm
1 .. 600 µm
Batch size 5
Etchant
Solutions and their concentrations.
 KOH
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 silicon: 1
Wafer size
Wafer size
Equipment Wet etch bench
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
 1 .. 150 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
 rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
 200 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 teflon boat, teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm