Process Hierarchy

on front
  KOH Silicon Etch II (Single side etching)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1000 µm
0 .. 1000 µm
Batch size 1
Etch rate 1.2 µm/min
Solutions and their concentrations.
Material silicon
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
silicon dioxide: 200, silicon nitride: 10000, silicon: 1
Sides processed either
Temperature 80 °C
Wafer size
Wafer size
Equipment Constant temperature bath
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
teflon cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm