Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (front-front align) (SU-8)
  1 Dehydration bake
on front
  2 Photoresist coating (SU-8)
MaterialSU-8
  3 SU-8 pre-bake
MaterialSU-8
on front
  4 Contact front-front alignment
on front
  5 Contact exposure
  6 SU-8 post exposure bake
MaterialSU-8
  7 Photoresist develop (SU-8)
MaterialSU-8
Process characteristics:
Perform dehydration bake
Perform dehydration bake*
yes no
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Amount of material added to a wafer.

Thickness tolerance is +/-10%
Resist thickness*
Amount of material added to a wafer. Thickness tolerance is +/-10%, must be 4 .. 400 µm
4 .. 400 µm
Magnification 1
Material SU-8
Min feature size 10 µm
Wafer size
Wafer size
Comments:
  • Pricing determined on case-by-case basis.