Process Hierarchy

on front
  Deep RIE (Bosch process) with photolithography
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 550 µm
0 .. 550 µm
Etch rate 1 µm/min
Solutions and their concentrations.
Bosch process
Material silicon
Min feature size 5 µm
Resist thickness 7 µm
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 75, silicon dioxide: 150, silicon: 1
Sides processed either
Wafer size
Wafer size