Process Hierarchy

on front
  Contact photolithography (front-back align) (AZ 9260)
  1 HMDS Prime
MaterialHMDSThickness1 nm
MaterialAZ 9260
MaterialAZ 9260
on front
  5 Contact G-line exposure
Depth10 µm
MaterialAZ 9260
MaterialAZ 9260
Process characteristics:
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 5 .. 10 µm
5 .. 10 µm
Excluded materials gold (category), copper
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
Field geometry
Shape of field with dimensions characterized by the maximum field size
Magnification 1
Material AZ 9260
Max field size 90 mm
Min feature size 5 µm
Wafer size
Wafer size
Extra terms