Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  HF release & Supercritical dry
  1 HF release etch
Materialsilicon dioxide
  2 Supercritical CO2 Dry
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 1 .. 10 µm
1 .. 10 µm
Perform hf dip
Perform hf dip*
yes no
Sides processed both
Wafer size
Wafer size