Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Pre-diffusion clean
  1 4:1 Sulfuric/peroxide bath
  2 50:1 HF dip
  3 HCl bath
Wafer size
Wafer size
Comments:
  • No metals or silicides on wafer.
  • First step (sulfuric peroxide clean) only applies to wafers with resist or just scribed.
  • Doesn't etch Si or Si3N4.