Process Hierarchy

on front
  Silicon nitride plasma etch
Materialsilicon nitride
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Batch size 12
Material silicon nitride
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 0.8, silicon nitride: 1
Wafer diameter(s)
List or range of wafer diameters the tool can accept
100 mm, 150 mm
Wafer size
Wafer size