Process Hierarchy

on front
  Phosphoric acid etch
Materialsilicon nitride
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1 µm
0 .. 1 µm
Batch size 12
Mask materials
Materials that can be used to mask etching.
photoresist (category)
Material silicon nitride
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
silicon nitride: 1
Wafer size
Wafer size