Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon dioxide plasma etch (anisotropic, MOS clean)
on front
  1 Silicon dioxide plasma etch (anisotropic, MOS clean)
Materialsilicon dioxide
  2 50:1 HF dip
on front
  3 Resist ash
Materialphotoresist (category)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 1 µm
0 .. 1 µm
Material silicon dioxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 7.5, silicon dioxide: 1, silicon: 7.5
Wafer size
Wafer size
Comments:
  • If Chamber D of P5000 not available, manual passivation/strip procedure must be performed.