Register
or
Sign in
Advantages
Capabilities
Company
How to Start
About MEMS
AES (Auger-electron spectroscopy): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Electrical metrology
Geometric metrology
Miscellaneous metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
AES (Auger-electron spectroscopy)
Process characteristics:
Materials
Material(s) to inspect.
Materials
Available
496K PMMA
950K PMMA
Alloy 42
alumina
aluminum
aluminum oxide
aluminum/copper [99.5:0.5]
aluminum/silicon [98:2]
aluminum/silicon [99:1]
aluminum/silicon/copper [98:1:1]
Arch OiR 620-7i
Arch OiR 897-10i
Arch OiR 897-12i
Arch OiR 906-17
AZ 1518
AZ 4330
AZ 4620
AZ 5214
AZ 5214e
AZ 7900
AZ 9245
AZ 9260
AZ HiR 1075
AZ nLOF 2070
AZ P4210
AZ P4400
AZ P9260
AZO
BARC
BCB 3022-63
BCB 4024-40
BCB 4026-46
Beryllium Copper
Borofloat (Schott)
borophosphosilicate glass
brass
BSG
carbon
ceramic
chromium
chromium (transparent)
chromium/aluminum
chromium/gold
chromium/gold/chromium
copper
Corning 1737
Durimide 112A
Durimide 115A
Durimide 32A
Durimide 7520
Dynachem OFPR
Foturan (Schott)
fused silica
Futurrex NR5-8000
Futurrex NR9-8000
gallium arsenide
gallium nitride
gallium phosphide
germanium
glass (Hoya)
glass (spin-on)
glass-ceramic
gold
gold (nano-porous)
gold/titanium
HR200 photoresist
indium phosphide
indium tin oxide
kapton
Kovar
lead
lithium niobate
Magnesium fluoride
Magnesium oxide
molybdenum
Nichrome
nickel
NR1-6000PY
NTO
OCG 825 35CS
OCG 897-12i
OCG 897-21i
OCG 897-7i
palladium
permalloy
phosphosilicate glass
phosphosilicate glass (low temperature)
photoresist (G-line)
PI2610
PI2611
PI2771
plating base metal
platinum
PMMA
PMMA with MMA
polyimide CG 284
polysilicon
ProTEK B1-18
ProTEK primer
Pyrex (Corning 7740)
PZT
quartz (single crystal)
Rogers R/Flex 8080
ruthenium
sapphire
SF4 Glass
Shipley 1045
Shipley 1075
Shipley 1805
Shipley 1811
Shipley 1812
Shipley 1813
Shipley 1818
Shipley 1827
Shipley 220
Shipley 3612
Shipley SPR220-3
Shipley SPR220-7
Shipley SPR700 1.2
Shipley SPR955 CM-0.9
Shipley SPR955 CM-2.1
Shipley Ultra i-123
Shipley UV210
Shipley UV6
Sichrome
silicon
silicon carbide
silicon dioxide
silicon dioxide (low temperature)
silicon nitride
silicon oxy-nitride
silver
soda lime
stainless steel
SU-8
tantalum
tantalum nitride
tantalum oxide
titanium
titanium nitride
titanium oxide
titanium/aluminum
titanium/nickel
titanium/tungsten
tungsten
vanadium
white crown
white crown (zinc-borosilicate)
Zeonor
ZEP 520
zinc
zinc oxide
zirconium dioxide
Selected
dielectric (category)
Material(s) to inspect.
Thickness
Thickness of material(s) layer to inspect.
Thickness
Å
µm
nm
Thickness of material(s) layer to inspect., must be 10 .. 100 nm
10 .. 100 nm
Excluded materials
gold (category), copper
Sides inspected
The sides of the wafer inspected by the process
either
Wafer size
Wafer size
25 mm
Equipment
PHI 660 Scanning Auger Microprobe System
Equipment characteristics:
MOS clean
no
Piece dimension
Range of wafer piece dimensions the equipment can accept
1 .. 25 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
circular, irregular, other, rectangular, triangular shard
Piece thickness
Range of wafer piece thickness the equipment can accept
100 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
BK7, Borofloat (Schott), ceramic, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, Pyrex (Corning 7740), quartz (fused silica), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 1000 µm
Comments:
The PHI 660 system is composed of a conventional scanning electron microscope with a lanthanum hexaboride (LaB6) cathode, a secondary electron detector, and an axial cylindrical mirror analyzer to detect Auger electrons produced during electron imaging. Very small spot sizes are available, down to 200A for imaging, and several thousand angstroms for rapid Auger data acquisition using high beam currents. Inert gas sputtering is used to clean surface contamination from samples and to remove material from a small area on the surface for depth profiling. Several modes of operation are available, including survey, line, profile, and elemental mapping. Multipoint analysis makes it a powerful tool for routine failure analysis and quality control of inorganic samples.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.