on front Photoresist ashing I (metal allowed) |
|
| Ambient Ambient to which substrate is exposed during processing |
oxygen |
|---|
| Batch size |
1 |
|---|
| Material |
photoresist (category) |
|---|
| Power Microwave power radiated into substrates being bonded |
100 W |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
|---|
| Sides processed |
either |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Plasma Asher |
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 800 µm |
|---|
