on front Spectrophotometric film thickness |
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| Materials |
photoresist (G-line), photoresist (negative) on silicon dioxide, photoresist (positive) in silicon dioxide, polyimide on silicon, polysilicon on silicon dioxide, silicon dioxide on silicon, silicon nitride on silicon, silicon nitride on silicon dioxide |
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| Sides processed |
either |
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| Thickness |
100 .. 40000 Å |
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| Wafer size |
|
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| Equipment |
Nanometrics CTS-102 |
| Equipment characteristics: |
| Batch sizes |
50 .. 125 mm: 1 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
recessed platen |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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