Process Hierarchy

on front
  Spectrophotometric film thickness
Materials photoresist (G-line), photoresist (negative) on silicon dioxide, photoresist (positive) in silicon dioxide, polyimide on silicon, polysilicon on silicon dioxide, silicon dioxide on silicon, silicon nitride on silicon, silicon nitride on silicon dioxide
Sides processed either
Thickness 100 .. 40000 Å
Wafer size
Wafer size
Equipment Nanometrics CTS-102
Equipment characteristics:
Batch sizes 50 .. 125 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
recessed platen
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm