Process Hierarchy

  Titanium wet etch
Process characteristics:
must be 20 .. 5000 Å
20 .. 5000 Å
Etch rate 0.2 µm/min
Etch type wet isotropic
Solutions and their concentrations.
HF/nitric acid
Mask materials
Materials that can be used to mask etching.
photoresist (G-line), photoresist (I-line) (category)
Material titanium
Sides processed both
Temperature 27 °C
Wafer size
Wafer size
Equipment wet bench I (acid bench)
Equipment characteristics:
Batch sizes 100 mm: 12, 125 mm: 12, 150 mm: 12
MOS clean no
Piece dimension
Range of wafer piece dimensions the equipment can accept
2 .. 150 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
circular, irregular, other, rectangular, triangular shard
Piece thickness
Range of wafer piece thickness the equipment can accept
200 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
teflon boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm