Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wafer scale testing
Batch size 1
File formats
List of CAD file formats supported (eg. GDSII, CIF)
 AutoCAD, comma separated value files
Measurement unit Resistance & Capacitance
Min bond pad size
Minimum characteristic dimension of bond pad.
 50 µm
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Wafer size
Wafer size
Equipment AT&T Double-sided prober
  • Custom two probe system measuring resistance and capacitance to determine interconnect continuity and isolation respectively.
    Standard Resistance 0.1 - 10MEG ohms
    Standard Capacitance 0.1p - 1micro Farad
    High Resolution Resistance 0.02 - 30MEG ohms
    High Resolution Capcitance 0.02p - 10micro Farad
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 vacuum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, polyethylene, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator
Comments:
  • File formats to include any x,y and net name information for the devices under test.
  • File format is flexible so long as x/y-coordinates and net name is given for each test point. Example programs can be emailed upon request.