Process Hierarchy

  Photoresist Develop (Manual)
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
AZ 312/water [1:1]
Etch type wet isotropic
Materials AZ 5214e, AZ 9245
Resist thickness 1 .. 6 µm
Temperature 20 °C
Wafer size
Wafer size
Equipment Wet bench
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 200 mm: 1, 50 mm: 1, 75 mm: 1
Piece geometry
Geometry of wafer pieces the equipment can accept
rectangular, circular
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), silicon carbide, silicon on insulator, quartz (single crystal), sapphire, silicon, Pyrex (Corning 7740), gallium arsenide, indium phosphide
Wafer thickness
List or range of wafer thicknesses the tool can accept
250 .. 800 µm