on front Silicon DRIE with anti-footing SOI option |
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| Process characteristics: |
| Depth |
|
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| Allowed materials |
silicon dioxide, OCG 825 35CS, silicon nitride, Arch OiR 897-10i, silicon (category) |
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| Aspect ratio |
20 |
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| Batch size |
1 |
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| Etch rate |
2 µm/min |
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| Material |
silicon |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 75, silicon dioxide: 150, silicon: 1 |
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| Sides processed |
either |
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| Wafer size |
|
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| Equipment |
STS DRIE |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
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| Wafer holder Device that holds the wafers during processing. |
electrostatic chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 750 µm |
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| Comments: |
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