Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Contact photolithography (Manual - Negative)
Process characteristics:
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Perform hardbake
100mm and 150mm diameter wafers only.
Perform hardbake*
100mm and 150mm diameter wafers only.
Perform linewidth metrology
Two measurement per wafer
Perform linewidth metrology*
yes no
Two measurement per wafer
Perform microscope inspection
30 mins inspection per wafer
Perform microscope inspection*
yes no
30 mins inspection per wafer
Perform stylus profilometry
One measurement per wafer
Perform stylus profilometry*
yes no
One measurement per wafer
Resist thickness
Resist thickness*
must be 6 .. 95 µm
6 .. 95 µm
Batch size 1
Magnification 1
Material Futurrex NR5-8000
Photoresist polarity negative
Wafer diameter(s)
List or range of wafer diameters the tool can accept
 50 mm, 75 mm, 100 mm, 150 mm
Wafer size
Wafer size
Comments:
  • 50mm, 75mm, 100mm and 150mm diameter wafers can be accommodated, unless the UV stabilization option is selected for the "Hardbake". In this case, only 100mm and 150mm wafers can be handled.
  • The linewidth metrology includes measurements at two different sites on the wafer. Please provide details about the inspection sites, otherwise, if available only alignment marks will be inspected.
  • The microscope inspection includes only 30 mins of minimum inspection per wafer.
  • The stylus step-hight metrology includes only one measurement per wafer.
  • For any other or additional inspection, the customer will specify the location and nature of inspection, and it
    See http://www.mems-exchange.org/users/litho-templates for information about layout requirements.
  • For PR strip please use the following process:
    https://www.mems-exchange.org/catalog/P3476/