Process Hierarchy

on front
  BCB Dry Etch
Ambient to which substrate is exposed during processing
sulfur hexafluoride
Depth 1000 Å
Etch rate 1000 Å/min
Etch type dry isotropic
Material BCB 4024-40
Pressure of process chamber during processing
250 mTorr
Sides processed either
Temperature 27 °C
Wafer size
Wafer size
Equipment Unaxis SLR 720
  • Gases available: SF6, O2, Ar
    Max. Power: 500W (V)
    Max. Pressure: 500mTorr
    Tantalum, tantalum oxide, titanium, silicon, silicon nitride, polymer descum,
Equipment characteristics:
Batch sizes 100 mm: 1, 125 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
conductive platen, quartz
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • Standard descum process after the cure.