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Photoresist wet strip (PRS 3000) : View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Photoresist wet strip (PRS 3000)
Depth
1 .. 30 µm
Etchant
Solutions and their concentrations.
PRS 3000
Material
photoresist (category)
Sides processed
both
Temperature
23 °C
Wafer size
Wafer size
50 mm
75 mm
100 mm
150 mm
200 mm
Equipment
Wet bench
Equipment characteristics:
Batch sizes
100 mm: 1, 150 mm: 1, 200 mm: 1, 50 mm: 1, 75 mm: 1
Piece geometry
Geometry of wafer pieces the equipment can accept
rectangular, circular
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), silicon carbide, silicon on insulator, quartz (single crystal), sapphire, silicon, Pyrex (Corning 7740), gallium arsenide, indium phosphide
Wafer thickness
List or range of wafer thicknesses the tool can accept
250 .. 800 µm