Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon RIE (smooth sidewalls)
Process characteristics:
Depth
Depth*
must be 0.2 .. 15 µm
0.2 .. 15 µm
Etch rate 1 µm/min
Etch type dry anisotropic
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 3, silicon dioxide: 20
Sides processed either
Wafer size
Wafer size
Equipment Applied Materials Centura 5200 etcher
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Pyrex (Corning 7740), silicon on insulator, silicon, fused silica
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Comments:
  • Profile angle: 88 +/- 2 degrees
  • Sidewall roughness (estimate): <50nm
Extra terms
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site.