Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  E-beam Lithography Down
Process characteristics:
Photoresist polarity
Photoresist polarity*
Resist thickness
Desired resist thickness.
Note that this depends on type of resist and the desired minimum feature size.
Resist thickness*
Desired resist thickness. Note that this depends on type of resist and the desired minimum feature size., must be 0.1 .. 1 µm
0.1 .. 1 µm
Min feature size 20 .. 80 nm
Voltage 50000 V
Wafer size
Wafer size
Equipment JEOL 6000 FSE
Equipment characteristics:
Batch sizes 2 .. 100 mm: 1
Beam spot diameter
Area of the beam used to write the mask
 3 .. 250 nm
Max field size 50 .. 800 µm
Piece dimension
Range of wafer piece dimensions the equipment can accept
 2 .. 100 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
 rectangular
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 600 µm