Process Hierarchy

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  Contact photolithography
Process characteristics:
Alignment type
Method used for mask alignment
Alignment type*
Method used for mask alignment
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 1 .. 20 µm
1 .. 20 µm
Alignment tolerance
Registration of CAD data to features on wafer
-0.5 .. 0.5 µm
Magnification 1
Material photoresist (I-line) (category)
Min feature size 1 .. 5 µm
Sides processed either
Wafer size
Wafer size
Equipment EVG aligner
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Pyrex (Corning 7740), fused silica, silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
Extra terms