Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  aMEMS
Process characteristics:
Perform release etch
Release the structure layer by dry etch prior to final shipment
Perform release etch*
yes no
Release the structure layer by dry etch prior to final shipment
Substrate material
The substrate on which the aMEMS structural layer is bonded.
(currently there is only one high-res Si choice with 2000 ohm.cm)
Substrate material*
The substrate on which the aMEMS structural layer is bonded. (currently there is only one high-res Si choice with 2000 ohm.cm)
Batch size 1
Design area
Active design area per chip site in a multi-user project runs
 5950 um x 5600 um
Die count
Number of fabricated dies per chip site
 20
Comments:
  • This is a SOI based two-mask process.
  • Please follow the design rules specified in section 2.3 of the design manual included below.
  • Please contact for custom run details.
  • To register interest in this process, please complete
    this http://www.mems-exchange.org/survey/amems/new
Attachments
[Thumbnail]amems_3.png (119.5 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2005-08-18 11:00
Process flow
[Thumbnail]amems_1.png (23.3 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2005-08-17 17:34
Cross-sectional view of thin layers. Film thicknesses are as follows: aluminum : 0.5um (Mask #2: STRUCTURE) silicon : 20um (Mask #2: STRUCTURE) Oxide: 1.6um (Mask #1: BRIDGE) Bond Layer: 20um
aMEMS Design Handbook v10.pdf (831.2 KB, application/pdf)
attached by ozgur (Mehmet Ozgur) on 2005-08-17 15:58