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Capabilities
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How to Start
About MEMS
4X align and exposure: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
4X align and exposure
Process characteristics:
Resist thickness
Resist thickness
*
µm
must be 0.65 .. 1.8 µm
0.65 .. 1.8 µm
Alignment tolerance
Registration of CAD data to features on wafer
0.15 µm
Alignment type
Method used to align materials to be bonded.
front-front
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
line
Field geometry
Shape of field with dimensions characterized by the maximum field size
square
Magnification
4
Min feature size
0.5 µm
Wafer size
Wafer size
150 mm
Equipment
Ultratech XLS200 4X stepper
Equipment characteristics:
Batch sizes
150 mm: 1
MOS clean
no
Wafer geometry
Types of wafers this equipment can accept
1-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Corning Eagle 2000, silicon, Corning 1737, silicon on insulator, quartz (fused silica)
Wafer thickness
List or range of wafer thicknesses the tool can accept
500 .. 900 µm