|
| Process characteristics: |
| Resist thickness |
|
|---|
| Alignment tolerance Registration of CAD data to features on wafer |
0.15 µm |
|---|
| Alignment type Method used to align materials to be bonded. |
front-front |
|---|
| Feature geometry Shape of feature with dimensions characterized by the minimum feature size |
line |
|---|
| Field geometry Shape of field with dimensions characterized by the maximum field size |
square |
|---|
| Magnification |
4 |
|---|
| Min feature size |
0.5 µm |
|---|
| Wafer size |
|
|---|
| Equipment |
Ultratech XLS200 4X stepper |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Corning Eagle 2000, silicon, Corning 1737, silicon on insulator, quartz (fused silica) |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
500 .. 900 µm |
|---|
