Process Hierarchy

  Photoresist develop
Process characteristics:
Depth 0.65 .. 10 µm
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
AZ developer
Etch type wet isotropic
Min feature size 0.5 µm
Resist thickness 0.65 .. 10 µm
Temperature 23 °C
Wafer size
Wafer size
Equipment TEL Mark VII Coater and Developer
Equipment characteristics:
Batch sizes 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm