|
| Depth |
1 .. 30 nm |
|---|
| Etch type |
wet isotropic |
|---|
| Etchant Solutions and their concentrations. |
HF/water [1:10] |
|---|
| Material |
silicon dioxide |
|---|
| Sides processed |
both |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Wet bench #1 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 25 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
teflon cassette |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
