on front Silicon dioxide RIE |
|
| Process characteristics: |
| Depth |
|
|---|
| Etch rate |
0.78 µm/min |
|---|
| Gas |
O2, Ar, C4F8 |
|---|
| Material |
silicon dioxide |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 6, silicon dioxide: 1 |
|---|
| Sides processed |
either |
|---|
| Temperature |
20 °C |
|---|
| Uniformity |
0.05 |
|---|
| Wafer size |
|
|---|
| Equipment |
LAM 4520XLe |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
electrostatic chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
