|
| Process characteristics: |
| Depth |
|
|---|
| Etch rate |
0.9 µm/min |
|---|
| Gas |
BCl3, Cl2, He |
|---|
| Material |
aluminum |
|---|
| Temperature |
40 °C |
|---|
| Uniformity |
0.05 |
|---|
| Wafer size |
|
|---|
| Equipment |
LAM 9600 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
electrostatic chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, fused silica, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 900 µm |
|---|
