Silicon-On-Glass MEMS (SOG-MEMS) |
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Bonding Method Wafer bonding method to be used |
Anodic bonding (Si to Pyrex) |
Design area Active design area per chip site in a multi-user project runs |
15 mm x 15 mm |
Device layer material |
silicon |
Device layer resistivity |
1 .. 20 Ω*cm |
Device layer thickness |
100 µm |
Die count Number of fabricated dies per chip site |
10 |
Substrate material |
Pyrex (Corning 7740) |
Comments: |
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Attachments |
SOG_design_rules_v2_03-19-07.pdf (799.2 KB, application/pdf)- attached by ozgur (Mehmet Ozgur) on 2007-04-23 14:14
- Revised design rules
sog_lr.jpg (165.7 KB, image/jpeg)- attached by ozgur (Mehmet Ozgur) on 2005-09-28 18:00
- SOG-MEMS process flow
sog3.png (591.0 KB, image/png)- attached by ozgur (Mehmet Ozgur) on 2005-09-28 18:00
- 3D view of a SOF-MEMS device
sog2.png (61.5 KB, image/png)- attached by ozgur (Mehmet Ozgur) on 2005-09-28 18:00
- SEM image of SOG-MEMS devices
sog1.png (79.3 KB, image/png)- attached by ozgur (Mehmet Ozgur) on 2005-09-28 18:00
- Description of SOG-MEMS device
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