Process Hierarchy

on front
  silicon DRIE (Bosch Process)
Process characteristics:
must be 1 .. 700 µm
1 .. 700 µm
Etch rate 0.5 .. 4 µm/min
Gas O2, N2, Ar, SF6, C4H8
Material silicon
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 60, silicon dioxide: 150
Sides processed either
Uniformity -0.1 .. 0.1
Wafer size
Wafer size
Equipment STS DRIE
Equipment characteristics:
Batch sizes 150 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon carbide
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • For thru etches, please check for additional steps.