Process Hierarchy

on front
  Advanced Oxide Etch (STS-AOE) Down
Process characteristics:
must be 0.5 .. 30 µm
0.5 .. 30 µm
Mask material
Materials that can be used to mask etching.
Mask material*
Materials that can be used to mask etching.
Etch rate 0.1 .. 0.5 µm/min
Etch type dry anisotropic
Sides processed either
Wafer size
Wafer size
Equipment STS- AOE
Equipment characteristics:
Batch sizes 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, fused silica, Borofloat (Schott)
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm