Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Spreading Resistance Analysis (SRA)
Process characteristics:
Depth
Depth of the scan
Depth*
Depth of the scan, must be 0.1 .. 50 µm
0.1 .. 50 µm
Batch size 1
Sides inspected
The sides of the wafer inspected by the process
 either
Equipment
Comments:
  • Measurement of carrier concentration vs. depth in silicon or germanium.
  • unpatterned wafers are preferred.