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| Process characteristics: |
| Alignment type Alignment requirement for the exposure |
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| Time Estimated write time per substrate.
CAD is required for the write-time estimation. |
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| Batch size |
1 |
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| Min feature size |
10 nm |
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| Resist thickness |
0.2 .. 1.5 µm |
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| Wafer size |
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| Equipment |
Vistec EBPG5000+ HR |
| Equipment characteristics: |
| Die holder Device that holds the die(s) during processing |
metal chuck |
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| Die thickness List or range of die thicknesses the tool can accept |
100 .. 1000 µm |
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| MOS clean |
no |
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| Mask plate dimensions Width, length, thickness of the mask plates (eg. 5x7x0.09 inch). |
5"x5"x0.09", 4"x4"x0.09" |
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| Piece dimension Range of wafer piece dimensions the equipment can accept |
3 .. 50 mm |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
triangular shard, rectangular, irregular, circular |
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| Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 1000 µm |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
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| Wafer holder Device that holds the wafers during processing. |
metal chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, quartz (fused silica), quartz (single crystal), silicon on insulator, gallium arsenide, lithium niobate, silicon, sapphire, silicon carbide |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 1000 µm |
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| Comments: |
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