Process Hierarchy

  E-beam exposure (ebeam)
Process characteristics:
Alignment type
Alignment requirement for the exposure
Alignment type*
Alignment requirement for the exposure
Time
Estimated write time per substrate.
CAD is required for the write-time estimation.
Time*
Estimated write time per substrate. CAD is required for the write-time estimation., must be 1 .. 600 min
1 .. 600 min
Batch size 1
Min feature size 10 nm
Resist thickness 0.2 .. 1.5 µm
Wafer size
Wafer size
Equipment Vistec EBPG5000+ HR
Equipment characteristics:
Die holder
Device that holds the die(s) during processing
metal chuck
Die thickness
List or range of die thicknesses the tool can accept
100 .. 1000 µm
MOS clean no
Mask plate dimensions
Width, length, thickness of the mask plates (eg. 5x7x0.09 inch).
5"x5"x0.09", 4"x4"x0.09"
Piece dimension
Range of wafer piece dimensions the equipment can accept
3 .. 50 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
triangular shard, rectangular, irregular, circular
Piece thickness
Range of wafer piece thickness the equipment can accept
100 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
metal chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
fused silica, quartz (fused silica), quartz (single crystal), silicon on insulator, gallium arsenide, lithium niobate, silicon, sapphire, silicon carbide
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 1000 µm
Comments:
  • Exposure only.