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Chromium DC-magnetron sputtering (low power): View
Low-stress SiN deposition
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
or call us at (703) 262-5368
Chromium DC-magnetron sputtering (low power)
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient to which substrate is exposed during processing
Rate at which material is added to a wafer
gold (category), copper
Pressure of process chamber during processing
RMS roughness of a surface
Denton Discovery 24
100 mm: 1, 150 mm: 1
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, Borofloat (Schott), silicon, silicon dioxide
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
This process uses a cathode power of 250W. An rf preclean can be performed prior to deposition. Residual stress and surface roughness values are from a 0.5 micron-thick film.
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.