Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Low-stress silicon nitride LPCVD ( <100 MPa)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 2.5 µm
0.01 .. 2.5 µm
Batch size 25
Material silicon nitride
Measured film thickness variation (+/- %) 10
Refractive index 2.25 .. 2.45
Residual stress -100 .. 100 MPa
Sides processed both
Temperature 810 °C
Equipment
Comments:
  • Wafers must be cleaned before shipping to fab.
  • 4" wafers only.
  • Silicon rich film composition (10:1)
  • This film is suitable for masking and passivation applications, but is not intended for wide area free standing membrane applications.