Process Hierarchy

on front
  Chromium DC-magnetron sputtering (high power)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient to which substrate is exposed during processing
Deposition rate
Rate at which material is added to a wafer
0.054 µm/min
Excluded materials gold (category), copper
Material chromium
Pressure of process chamber during processing
5 mTorr
Residual stress 93 MPa
RMS roughness of a surface
4.1 nm
Sides processed either
Temperature 35 °C
Wafer size
Wafer size
Equipment Denton Discovery 24
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, Borofloat (Schott), silicon, silicon dioxide
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
  • This process uses a cathode power of 750W. An rf preclean can be performed prior to deposition. Residual stress and surface roughness values are from a 0.5 micron-thick film.
Extra terms