Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Titanium DC sputtering
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 0.2 µm
0 .. 0.2 µm
Ambient
Ambient to which substrate is exposed during processing
 argon
Batch size 1
Deposition rate
Rate at which material is added to a wafer
 0.004 µm/min
Material titanium
Pressure
Pressure of process chamber during processing
 2e-06 Torr
Sides processed either
Temperature 23 °C
Wafer size
Wafer size
Equipment Metallica Sputtering System
Equipment characteristics:
Piece geometry
Geometry of wafer pieces the equipment can accept
 rectangular, irregular, circular
Piece thickness
Range of wafer piece thickness the equipment can accept
 250 .. 1000 µm
Wafer holder
Device that holds the wafers during processing.
 palette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on sapphire, quartz (single crystal), glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 250 .. 1000 µm
Comments:
  • The sputter system can hold up to 4 wafers (one wafer in each palette). However the wafers are sputtered one at a time. Usually one of the loaded wafers is used for the pre-cleaning of the target.