Process Hierarchy

on front
  Copper DC-magnetron sputter
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.01 .. 1 µm
0.01 .. 1 µm
Batch size 8
Material copper
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Enerjet
  • Fixtures exist to support 50mm, 75mm, and 100mm wafers. There is a small edge-exclusion along the entire wafer edge for these fixtures. Up to eight wafers may be sputtered with these fixtures.
  • Clamping fixtures exist to support irregular substrates from 25mm to 75mm wide. Sputter is blocked where clamping fingers hold sample.
  • For irregular samples 25mm to near 50mm wide up to 16 samples may be run per batch.
  • For irregular samples 50mm to 75mm wide only 8 samples can be run per batch.
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
rotating orbital
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 1000 µm