on front Silicon dioxide PECVD |
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| Process characteristics: |
| Thickness Thickness of material to be deposited. |
|
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| Ambient Ambient to which substrate is exposed during processing |
nitrous oxide, silane |
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| Deposition rate Rate at which material is added to a wafer |
310 Å/min |
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| Material |
silicon dioxide |
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| Microstructure |
amorphous |
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| Pressure Pressure of process chamber during processing |
650 mTorr |
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| Refractive index |
1.44 |
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| Residual stress |
-350 MPa |
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| Sides processed |
either |
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| Temperature |
350 °C |
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| Wafer size |
|
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| Equipment |
STS PECVD |
| Equipment characteristics: |
| Batch sizes |
100 mm: 2, 50 mm: 2, 75 mm: 2 |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, rectangular |
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| Piece thickness Range of wafer piece thickness the equipment can accept |
200 .. 1000 µm |
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| Wafer holder Device that holds the wafers during processing. |
heated plate |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, glass (category), quartz (single crystal), silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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| Comments: |
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